Thermal Transport in Superlattice Castellated Field Effect Transistors
نویسندگان
چکیده
منابع مشابه
Field dependent transport properties in InAs nanowire field effect transistors.
We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed. Velocity-field plots are constructed from a large set of output and transfer curves that show negative differential conductance behavior and marked mobility degradation at high injection fields. Two dimen...
متن کاملBallistic Transport in Spin Field-Effect Transistors Built on Silicon
The spin field-effect transistor (SpinFET) proposed by Datta and Das [1] is composed of ferromagnetic metallic source and drain contacts which sandwich a semiconductor region. Current modulation in the devices is achieved through manipulation of the orientation of the electron spin in the semiconductor channel. We consider the value of the conduction band mismatch between the contacts and the c...
متن کاملElectrical Transport Properties and Field Effect Transistors of Carbon Nanotubes
This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also re...
متن کاملDiamond Field Effect Transistors
High-quality single crystal diamond has been used to demonstrate the RF performance of hydrogenterminated diamond field effect transistors of varying gate lengths; this includes the first data on a sub100nm diamond transistor. The RF performance for 220nm, 120nm and 50nm gate length transistors was extracted and a cut-off frequency of 55 GHz was measured for the 50nm device. This is the highest...
متن کاملOrganic Field-Effect Transistors
Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and o...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2019
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2019.2929424